5SHY35L4512 is an Asymmetric Integrated Gate-Commutated Thyristor (IGCT) produced by ABB. The specific characteristics and technical parameters are as follows:
Low on-state voltage: At a current of 4000A, the on-state voltage is only 2V, which helps to reduce on-state loss
Optimized design: Optimized for low frequency (less than 100Hz) and wide temperature range applications
High reliability: Applicable to applications that require high reliability
High electromagnetic immunity: has a high anti-electromagnetic interference ability
Control interface: Simple control interface with state feedback, easy to achieve control and monitoring
Power supply voltage: Compatible with AC or DC power supply voltage
The maximum blocking voltage is 4500V for VDRM and 2800V for VDC-link
Gate cell voltage: The typical value of VGIN is 40V, and A current of at least 2.1A is required to start the gate cell
Internal current limit: The gate unit can limit the maximum current to 8A
Optical control input/output: specifications with optical input power and optical output power, as well as minimum on-time and off-time
In addition, the 5SHY35L4512 also has a variety of visual feedback indicators, such as indicating whether the thyristor is closed, whether the gate current is flowing, whether it is ready or faulty, and whether the power supply voltage is within the specified range
The product is widely used in HVDC transmission, conversion and industrial power control, especially in the need for high-performance power control and power protection