PIB671-1500
Overload protection of IGBT modules usually involves the following aspects:
Overcurrent protection: This is very important because IGBTs have poor overcurrent resistance and overcurrent may damage IGBTs in a very short period of time. Overcurrent protection can be achieved by current measurement or desaturation detection. In some designs, shunt resistors or current transformers are used to detect overcurrent, and when overcurrent is detected, the control circuit will quickly cut off the IGBT trigger signal to achieve protection
Overvoltage protection: When the IGBT switches from the on state to the off state, high voltage spikes may be generated due to stray inductors and load inductors in the circuit, so overvoltage protection is also very important. Overvoltage protection can be achieved by optimizing circuit design to reduce stray inductance and using absorption loop
Desaturation phenomenon and its protection: If the collector-emitter voltage (Uce) drops below a certain threshold when the IGBT is on, the IGBT may enter a desaturation state. In order to prevent this, some driver chips will be set inside the desaturation protection mechanism, when the desaturation phenomenon is detected, the IGBT will be turned off in time

The IGBT driver module of PIB671-1500 model may encounter some common faults and problems in practical applications. The following are some typical faults and corresponding solutions:
Overcurrent damage: IGBTs can be damaged due to overcurrent, including problems due to the lock effect, prolonged overcurrent operation, or short circuit timeout (>10μs). To avoid such problems, effective overcurrent protection circuits should be used, such as instantaneous gate pulse blocking methods, or soft drop grid voltage and soft turn-off techniques to limit the short circuit current peak and extend the allowed short circuit time
Overvoltage damage: Due to the inductance component in the circuit may produce a peak voltage during shutdown, if the highest peak voltage of the IGBT is exceeded, it may lead to IGBT breakdown damage. The solution includes the dynamic control of the absorbing circuit and gate voltage, as well as the connection of Zener diodes at both collector-gate ends to avoid the overvoltage problem caused by high dv/dt
Overheating damage: Overheating may be due to the junction temperature of the IGBT module exceeding the maximum temperature limit of the chip. In order to prevent overheating damage, it is necessary to provide good heat dissipation conditions, such as the proper installation of radiators and fans to enhance air circulation
Applied main circuit voltage in the open state between G-E: Applied main circuit voltage in the open state between gate and emitter may cause the IGBT to automatically switch on, resulting in device damage. In order to avoid this situation, it is necessary to discharge the voltage of the main circuit to 0V, and then switch the gate signal
Mechanical stress damage to the product: If the terminal of the IGBT device is subjected to strong external force or vibration, it may cause stress and damage. Similar stresses should be avoided during installation, and the printed substrate for gate drive should be fixed
False trigger of the driver protection function: In some cases, the protection function of the IGBT drive may be mistakenly triggered due to switching noise or unreasonable timing Settings. To avoid false triggering, you can increase the fault suppression time or optimize the grid resistance Settings
IGBT misturn on when the body diode reverse recovery: When the IGBT is turned off, due to the reverse recovery of the body diode, it may cause misturn on. To avoid this, you can parallel the capacitor between the gate and the emitter, increase the negative grid voltage amplitude, or increase the grid resistance
Through the above measures, the failure of IGBT driver module can be effectively reduced and the stability and reliability of the system can be improved.